- 您现在的位置：买卖IC网 > Sheet目录539 > ZXM62N03GTA (Diodes Inc)MOSFET N-CH 30V ENHANCE SOT223
ZXM62N03G
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V GS =10V; T A =25°C)(b)
(V GS =10V; T A =70°C)(b)
(V GS =10V; T A =25°C)(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
I D
I DM
I S
I SM
P D
P D
T j :T stg
LIMIT
30
20
4.7
3.8
3.4
16
2.6
16
2.0
16
3.9
31
-55 to +150
UNIT
V
V
A
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R θ JA
R θ JA
VALUE
62.5
32
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 1 - OCTOBER 2002
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
ZXM62P02E6TA
MOSFET P-CH 20V 2.3A SOT23-6
ZXM62P03E6TA
MOSFET P-CH 30V 2.6A SOT-23-6
ZXM64N02XTC
MOSFET N-CHAN 20V MSOP8
ZXM64N035L3
MOSFET N-CH 35V 13A TO-220-3
ZXM64P02XTC
MOSFET P-CHAN 20V MSOP8
ZXM64P035L3
MOSFET P-CH 35V 12A TO-220-3
ZXM64P03XTC
MOSFET P-CHAN 30V MSOP8
ZXM66P02N8TC
MOSFET P-CHAN 20V 8SOIC
相关代理商/技术参数
ZXM62N03GTC
制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P02E6
制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23-6 制造商:DIODES 功能描述:MOSFET, P, SOT-23-6, Transistor Polarity:P Channel, Continuous Drain Current Id: 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, 20V, -2.3A, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:-2.3A, Drain Source Voltage Vds:20V, On Resistance Rds(on):200mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:-700mV , RoHS Compliant: Yes
ZXM62P02E6
制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23-6
ZXM62P02E6_04
制造商:ZETEX 制造商全称:ZETEX 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62P02E6TA
功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62P02E6TA-CUT TAPE
制造商:DIODES 功能描述:ZXM62P02E6 20 V 0.2 Ohm P-Channel Enhancement Mode Vertical DMOS FET - SOT-23-6
ZXM62P02E6TC
功能描述:MOSFET 20V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ZXM62P03E6
制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, P CH, 30V, -1.5A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes